BSO615CT Price & Stock
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Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Specifications
| Series | SIPMOS® |
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Gate Charge (Qg) @ Vgs | 22.5nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 380pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8 |
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See Also:
BSO615C
BSO615CG
BSO615NG
BSO612CV
BSO615N
BSO615C G
BSO615
BSO615NV
BSO615N G
BSO612V
BSO612CVG
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