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Manufacturer
Semiconductors - Discretes > Transistors > Bipolar Transistors > Single Bipolar Junction Transistors - BJT
TRANSISTOR NPN TO-3
Specifications
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 400V |
| Transition Frequency ft | - |
| Power Dissipation Pd | 100W |
| DC Collector Current | 10A |
| DC Current Gain hFE | 30hFE |
| Transistor Case Style | TO-3 |
| No. of Pins | 2Pins |
| Operating Temperature Max | 200°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| SVHC | No SVHC (17-Dec-2015) |
| Av Current Ic | 10A |
| Collector Emitter Saturation Voltage Vce(on) | 1.5V |
| Continuous Collector Current Ic Max | 10A |
| Current Ic @ Vce Sat | 5A |
| Current Ic Continuous a Max | 10A |
| Current Ic hFE | 1.2A |
| Fall Time @ Ic | 0.5µs |
| Full Power Rating Temperature | 25°C |
| Hfe Min | 30 |
| No. of Transistors | 1 |
| Operating Temperature Min | -65°C |
| Operating Temperature Range | -65°C to +200°C |
| Power Dissipation Ptot Max | 100W |
| Termination Type | Through Hole |
| Voltage Vces | 800V |
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