GT25Q102 Price & Stock
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Manufacturer
Semiconductors - Discretes > Transistors > IGBT Single Transistors
IGBT 1200V TO-3P(LH)
Specifications
| DC Collector Current | 25A |
| Collector Emitter Saturation Voltage Vce(on) | 2.7V |
| Power Dissipation Pd | 200W |
| Collector Emitter Voltage V(br)ceo | 1.2kV |
| Transistor Case Style | TO-3P |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| Current Ic Continuous a Max | 25A |
| Fall Time Typ | 160ns |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +150°C |
| Power Dissipation Max | 200W |
| Pulsed Current Icm | 50A |
| Rise Time | 100ns |
| Termination Type | Through Hole |
| Transistor Polarity | N Channel |
| Transistor Type | IGBT |
| Voltage Vces | 1.2kV |
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Honour Technology Co., Ltd
Certificates
| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| GT25Q102 ¹¦ÂÊÈݼ«¹Ü | TOSHIBA | TO-3PL | 100000 |
|
Inquiry |
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| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| GT25Q102 | TOSHIBA | In Stock |
|
Inquiry | ||
| GT25Q102_06 | TOSHIBA | In Stock |
|
Inquiry |
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