IPB80N06S2L07ATMA1 Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 55V 80A TO263-3
Specifications
Series OptiMOS™
Part Status Discontinued
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 6.7 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 150µA
Gate Charge (Qg) @ Vgs 130nC @ 10V
Input Capacitance (Ciss) @ Vds 3160pF @ 25V
Power - Max 210W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
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Part # Manufacturer Description Stock Price Buy
IPB80N06S2L07ATMA1 Infineon Technologies MOSFET N-CH 55V 80A TO263-3 16196
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IPB80N06S2L07ATMA1 price|Microchip USA
Microchip USA
Certificates
Part # Manufacturer Description Stock Price Buy
IPB80N06S2L07ATMA1 Infineon Technologies OEM/EMS/CM ONLY | NO BROKER QUOTES | Member of ERAI, GIDEP, & ITAR | ISO9001 AND AS9120 Certified ; Tray 263
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IPB80N06S2L07ATMA1 Infineon Technologies MOSFET N-CH 55V 80A TO263-3 150000
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IPB80N06S2L07ATMA1 Infineon Technologies MOSFET N-CH 55V 80A TO263-3
Transistors - FETs, MOSFETs - Single
3133
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IPB80N06S2L07ATMA1 Infineon Technologies MOSFET N-CH 55V 80A TO263-3 7446
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IPB80N06S2L07ATMA1 International Rectifier (Infineon Technologies) MOSFET N-CH 55V 80A TO263-3 ; PG-TO263-3-2
Transistors - FETs, MOSFETs - Single
Available
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Transistors - FETs, MOSFETs - Single
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IPB80N06S2L07ATMA1
sku #: IPB80N06S2L07ATMA1
Infineon 1022
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