IRG4PF50WPBF Price & Stock

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Manufacturer
Discrete Semiconductor Products > Transistors - IGBTs - Single
IGBT 900V 51A 200W TO247AC
Specifications
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 900V
Current - Collector (Ic) (Max) 51A
Current - Collector Pulsed (Icm) 204A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 28A
Power - Max 200W
Switching Energy 190µJ (on), 1.06mJ (off)
Input Type Standard
Gate Charge 160nC
Td (on/off) @ 25°C 29ns/110ns
Test Condition 720V, 28A, 5 Ohm, 15V
Package / Case TO-247-3
Mounting Type Through Hole
Supplier Device Package TO-247AC
Semiconductors - Discretes > Transistors > IGBT Single Transistors
IGBT 900V 51A TO-247AC
Specifications
DC Collector Current 51A
Collector Emitter Saturation Voltage Vce(on) 2.7V
Power Dissipation Pd 200W
Collector Emitter Voltage V(br)ceo 900V
Transistor Case Style TO-247AC
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL -
SVHC No SVHC (17-Dec-2015)
Current Ic Continuous a Max 51A
Current Temperature 25°C
Device Marking IRG4PF50WPbF
Fall Time Max 220ns
Fall Time tf 220ns
Full Power Rating Temperature 25°C
No. of Transistors 1
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +150°C
Power Dissipation Max 200W
Pulsed Current Icm 204A
Rise Time 26ns
Termination Type Through Hole
Transistor Polarity N Channel
Transistor Type IGBT
Voltage Vces 900V
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