IRLL2705PBF Price & Stock

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Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 55V 3.8A SOT223
Specifications
Series HEXFET®
Part Status Not For New Designs
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta)
Rds On (Max) @ Id, Vgs 40 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) @ Vds 870pF @ 25V
Power - Max 1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's (< 600V)
MOSFET N 55V 3.8A SOT-223
Specifications
Transistor Polarity N Channel
Continuous Drain Current Id 3.8A
Drain Source Voltage Vds 55V
On Resistance Rds(on) 40mohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 2V
Power Dissipation Pd 2.1W
Transistor Case Style SOT-223
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL MSL 1 - Unlimited
SVHC No SVHC (17-Dec-2015)
Current Id Max 3.8A
Current Temperature 25°C
External Depth 7.3mm
External Length / Height 1.7mm
External Width 6.7mm
Full Power Rating Temperature 25°C
Junction to Case Thermal Resistance A 60°C/W
No. of Transistors 1
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +150°C
Pulse Current Idm 30A
SMD Marking LL2705
Tape Width 12mm
Voltage Vds Typ 55V
Voltage Vgs Max 2V
Voltage Vgs Rds on Measurement 10V
Voltage Vgs th Max 2.5V
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Part # Manufacturer Description Stock Price Buy
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