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Manufacturer
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - Bipolar (BJT) Arrays
TRANSISTOR ARRAY NPN
Specifications
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 24V |
| Power Dissipation Pd | 750mW |
| DC Collector Current | 50mA |
| DC Current Gain hFE | 100hFE |
| Transistor Case Style | DIP |
| No. of Pins | 14Pins |
| Operating Temperature Max | 125°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | - |
| Current Ic Continuous a Max | 50mA |
| Device Marking | NTE912 |
| Gain Bandwidth ft Typ | 550MHz |
| Module Configuration | Five |
| No. of Transistors | 3 |
| Operating Temperature Min | -55°C |
| Operating Temperature Range | -55°C to +125°C |
| Transition Frequency ft | 550MHz |
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