STP7NM60N Price & Stock
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Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 600V 5A TO-220AB
Specifications
| Series | MDmesh™ II |
| Part Status | Obsolete |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900 mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 363pF @ 50V |
| Power - Max | 45W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
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| Part # | Manufacturer | Description | Stock | Price | Buy | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| STP7NM60N | ST Microelectronics | POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 600V, 0.9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 9 |
|
Buy | ||||||
| STP7NM60N | ST Microelectronics | POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 600V, 0.9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 40 |
|
Buy |
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| Part # | Manufacturer | Description | Stock | Price | Buy | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| STP7NM60N | STMicroelectronics | Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25¡ãC 5A (Tc) Drive Voltage: (Max Rds On Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250?A Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 363pF @ 50V Vgs (Max) - FET Feature: - Power Dissipation (Max) 45W (Tc) Rds On (Max) @ Id Vgs 900 mOhm @ 2.5A 10V Operating Temperature: 150¡ãC (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Shipment: UPS/EMS/DHL/FedEx Express. Condtion: New original factory. ; DC:2012+ ; TUBE | 800 |
|
Inquiry |
KaiLiYuan Electronic Technology (ShenZhen) Co., Ltd
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