IPD180N10N3 G Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 100V 43A TO252-3
Specifications
Series OptiMOS™
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Rds On (Max) @ Id, Vgs 18 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33µA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 50V
Power - Max 71W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Exact Matches
IPD180N10N3 G price|Mouser
Mouser
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IPD180N10N3GATMA1
sku #: 726-IPD180N10N3GATMA
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304 In Stock
1:  $1.30
10:  $1.17
100:  $0.911
500:  $0.753
1000:  $0.66
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Arrow
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IPD180N10N3 G Infineon Technologies MOSFET N-CH 100V 43A TO252-3 1924
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IPD180N10N3 G price|Win Source
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IPD180N10N3G Infineon Technologies 2000
40:  $1.312
95:  $1.083
145:  $1.050
200:  $1.017
255:  $0.984
340:  $0.886
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