BCR158WE6327HTSA1 Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
TRANS PREBIAS PNP 250MW SOT323-3
Specifications
Part Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 250mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package PG-SOT323-3
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BCR158WE6327HTSA1 Infineon Technologies TRANS PREBIAS PNP 250MW SOT323-3 150000
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BCR158WE6327HTSA1 Infineon Technologies TRANS PREBIAS PNP 250MW SOT323-3
Transistors - Bipolar (BJT) - Single, Pre-Biased
5487
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Part # Manufacturer Description Stock Price Buy
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$
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Part # Manufacturer Description Stock Price Buy
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Part # Manufacturer Description Stock Price Buy
BCR158WE6327HTSA1 Infineon Technologies TRANS PREBIAS PNP 250MW SOT323-3 4073
Price negotiable
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Certificates
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$0
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$
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Part # Manufacturer Description Stock Price Buy
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BCR158WE6327HTSA1 Infineon Technologies TRANS PREBIAS PNP 250MW SOT323-3 in stock
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BCR158WE6327HTSA1 Infineon FL-2018 ; DC:1803+ 225000
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