IPB180N04S400ATMA1 Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 40V 180A TO263-7-3
Specifications
Series OptiMOS™
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Rds On (Max) @ Id, Vgs 0.98 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) @ Vgs 286nC @ 10V
Input Capacitance (Ciss) @ Vds 22880pF @ 25V
Power - Max 300W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package PG-TO263-7-3
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's (< 600V)
MOSFET N-CH 40V 180A TO-263-7
Specifications
Transistor Polarity N Channel
Continuous Drain Current Id 180A
Drain Source Voltage Vds 40V
On Resistance Rds(on) 0.0008ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 3V
Power Dissipation Pd 300W
Transistor Case Style TO-263
No. of Pins 7Pins
Operating Temperature Max 175°C
Product Range -
Automotive Qualification Standard -
MSL MSL 3 - 168 hours
SVHC No SVHC (17-Dec-2015)
IPB180N04S400ATMA1 price|Arrow
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