IPB180N04S4LH0ATMA1 Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH TO263-7
Specifications
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Rds On (Max) @ Id, Vgs 1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 180µA
Gate Charge (Qg) @ Vgs 310nC @ 10V
Input Capacitance (Ciss) @ Vds 24440pF @ 25V
Power - Max 250W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package PG-TO263-7-3
IPB180N04S4LH0ATMA1 price|Arrow
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