IPB80N04S2H4ATMA1 Price & Stock

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Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 40V 80A TO263-3
Specifications
Series OptiMOS™
Part Status Discontinued
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 148nC @ 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max 300W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
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IPB80N04S2H4ATMA1 Infineon Technologies MOSFET N-CH 40V 80A TO263-3
Transistors - FETs, MOSFETs - Single
5659
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IPB80N04S2H4ATMA1 International Rectifier (Infineon Technologies) MOSFET N-CH 40V 80A TO263-3
Transistors - FETs, MOSFETs - Single
In-Stock
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IPB80N04S2H4ATMA1 Infineon Technologies MOSFET N-CH 40V 80A TO263-3 6770
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IPB80N04S2H4ATMA1 Infineon Technologies AG 7500
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IPB80N04S2H4ATMA1 Infineon Technologies MOSFET N-CH 40V 80A TO263-3 4786
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IPB80N04S2H4ATMA1 Infineon Technologies MOSFET N-CH 40V 80A TO263-3 150000
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IPB80N04S2H4ATMA1 Infineon Technologies MOSFET N-CH 40V 80A TO263-3 ; DC:21+ ; PG-TO263-3-2 268
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IPB80N04S2H4ATMA1 International Rectifier (Infineon Technologies) MOSFET N-CH 40V 80A TO263-3 ; PG-TO263-3-2
Transistors - FETs, MOSFETs - Single
Available
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IPB80N04S2H4ATMA1 Infineon Technologies MOSFET N-CH 40V 80A TO263-3 ; DC:21+ ; PG-TO263-3-2 100
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IPB80N04S2H4ATMA1 Infineon Technologies MOSFET N-CH 40V 80A TO263-3 16194
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IPB80N04S2H4ATMA1 Infineon Technologies TO-263-3 D2Pak (2 Leads + Tab) TO-263AB New and original,In Stock 18163
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IPB80N04S2H4ATMA1 Infineon Technologies Check alternative solution with competitive price 56898
$0.0
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IPB80N04S2H4ATMA1 price|Depu Electronics
Depu Electronics
Certificates
Part # Manufacturer Description Stock Price Buy
IPB80N04S2H4ATMA1 FEELING 2019+_TO-252_new and original 2500
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IPB80N04S2H4ATMA1 Infineon OEM/CM ONLY 477
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