IPD031N06L3 G Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 100A TO252-3
Specifications
Series OptiMOS™
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 3.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 93µA
Gate Charge (Qg) @ Vgs 79nC @ 4.5V
Input Capacitance (Ciss) @ Vds 13000pF @ 30V
Power - Max 167W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
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IPD031N06L3G 12+ TO252 190882
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10:  $1.52928
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IPD031N06L3 G Infineon Technologies MOSFET N-CH 60V 100A TO252-3 857
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IPD031N06L3 G INF SOT252; new and original ROHS 10000
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IPD031N06L3G INFINEON TO252 ; DC:18+ 58877
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IPD031N06L3G INFINEON DC:2018+ ; TO-252 3110
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IPD031N06L3 G price|Chip Source Co.
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IPD031N06L3G DEUTSCH SMD ; DC:2021+ 1200
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IPD031N06L3 G Infineon Technologies MOSFET N-CH 60V 100A TO252-3 0
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sku #: IPD031N06L3G
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