IPD50R1K4CEBTMA1 Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 500V 3.1A PG-TO-252
Specifications
Series CoolMOS™ CE
Part Status Not For New Designs
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 70µA
Gate Charge (Qg) @ Vgs 1nC @ 10V
Input Capacitance (Ciss) @ Vds 178pF @ 100V
Power - Max 25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's (< 600V)
MOSFET N-CH 500V 3.1A TO-252-3
Specifications
Transistor Polarity N Channel
Continuous Drain Current Id 3.1A
Drain Source Voltage Vds 500V
On Resistance Rds(on) 1.26ohm
Rds(on) Test Voltage Vgs 13V
Threshold Voltage Vgs 3V
Power Dissipation Pd 25W
Transistor Case Style TO-252
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL MSL 1 - Unlimited
SVHC No SVHC (17-Dec-2015)
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