IRFB3077PBF Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 75V 120A TO-220AB
Specifications
Series HEXFET®
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Rds On (Max) @ Id, Vgs 3.3 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 220nC @ 10V
Input Capacitance (Ciss) @ Vds 9400pF @ 50V
Power - Max 370W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's (< 600V)
MOSFET N 75V TO-220
Specifications
Transistor Polarity N Channel
Continuous Drain Current Id 210A
Drain Source Voltage Vds 75V
On Resistance Rds(on) 3.3mohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 4V
Power Dissipation Pd 370W
Transistor Case Style TO-220AB
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range -
Automotive Qualification Standard -
MSL -
SVHC No SVHC (17-Dec-2015)
Avalanche Single Pulse Energy Eas 240mJ
Capacitance Ciss Typ 9400pF
Cont Current Id @ 100°C 150A
Cont Current Id @ 25°C 210A
Current Id Max 210A
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +175°C
Pulse Current Idm 850A
Rth 0.4
Termination Type Through Hole
Voltage Vds 75V
Voltage Vds Typ 75V
Voltage Vgs Max 4V
Voltage Vgs Rds on Measurement 10V
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IRFB3077PBF
sku #: 25M9790
Infineon Infineon - Mosfet, N-Ch, 75V, 210A, 175Deg C, 370W - Irfb3077Pbf |Infineon IRFB3077PBF in stock
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