IRFB31N20DPBF Price & Stock

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Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 200V 31A TO-220AB
Specifications
Series HEXFET®
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Rds On (Max) @ Id, Vgs 82 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) @ Vgs 107nC @ 10V
Input Capacitance (Ciss) @ Vds 2370pF @ 25V
Power - Max 3.1W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's (< 600V)
MOSFET N 200V 31A TO-220
Specifications
Transistor Polarity N Channel
Continuous Drain Current Id 31A
Drain Source Voltage Vds 200V
On Resistance Rds(on) 82mohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 5.5V
Power Dissipation Pd 200W
Transistor Case Style TO-220AB
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range -
Automotive Qualification Standard -
MSL -
SVHC No SVHC (17-Dec-2015)
Current Id Max 31A
Junction to Case Thermal Resistance A 0.75°C/W
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +175°C
Pulse Current Idm 124A
Termination Type Through Hole
Voltage Vds Typ 200V
Voltage Vgs Max 5.5V
Voltage Vgs Rds on Measurement 10V
Voltage Vgs th Max 5.5V
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Infineon Infineon - Mosfet, N, 200V, 31A, To-220 - Irfb31N20Dpbf |Infineon IRFB31N20DPBF out of stock
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