IRFB3207PBF Price & Stock

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Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 75V 180A TO-220AB
Specifications
Series HEXFET®
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 170A (Tc)
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 260nC @ 10V
Input Capacitance (Ciss) @ Vds 7600pF @ 50V
Power - Max 300W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's (< 600V)
MOSFET N 75V TO-220
Specifications
Transistor Polarity N Channel
Continuous Drain Current Id 180A
Drain Source Voltage Vds 75V
On Resistance Rds(on) 0.0036ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 4V
Power Dissipation Pd 330W
Transistor Case Style TO-220AB
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range -
Automotive Qualification Standard -
MSL -
SVHC No SVHC (17-Dec-2015)
Current Id Max 180A
Current Temperature 25°C
Full Power Rating Temperature 25°C
Lead Spacing 2.54mm
No. of Transistors 1
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +175°C
Pin Format 1 g
Pulse Current Idm 720A
Voltage Vds Typ 75V
Voltage Vgs Max 4V
Voltage Vgs Rds on Measurement 10V
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Part # Manufacturer Description Stock Price Buy
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100-499:  $1.43
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