IRFB3207ZPBF Price & Stock

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Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 75V 120A TO-220AB
Specifications
Series HEXFET®
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) @ Vds 6920pF @ 50V
Power - Max 300W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's (< 600V)
MOSFET N 75V TO-220AB
Specifications
Transistor Polarity N Channel
Continuous Drain Current Id 170A
Drain Source Voltage Vds 75V
On Resistance Rds(on) 4.1mohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 4V
Power Dissipation Pd 300W
Transistor Case Style TO-220AB
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range -
Automotive Qualification Standard -
MSL -
SVHC No SVHC (17-Dec-2015)
Base Number 3207
Current Id Max 120A
N-channel Gate Charge 120nC
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +175°C
Pulse Current Idm 670A
Termination Type Through Hole
Voltage Vds Typ 75V
Voltage Vgs Max 20V
Voltage Vgs Rds on Measurement 10V
Voltage Vgs th Max 4V
Voltage Vgs th Min 2V
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Part # Manufacturer Description Stock Price Buy
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Discrete Semiconductor Devices>Transistors - FETs, MOSFETs - Single
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