IRFB33N15DPBF Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 150V 33A TO-220AB
Specifications
Series HEXFET®
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Rds On (Max) @ Id, Vgs 56 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) @ Vgs 90nC @ 10V
Input Capacitance (Ciss) @ Vds 2020pF @ 25V
Power - Max 3.8W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's (< 600V)
MOSFET N 150V 33A TO-220
Specifications
Transistor Polarity N Channel
Continuous Drain Current Id 33A
Drain Source Voltage Vds 150V
On Resistance Rds(on) 56mohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 5.5V
Power Dissipation Pd 170W
Transistor Case Style TO-220AB
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range -
Automotive Qualification Standard -
MSL -
SVHC No SVHC (17-Dec-2015)
Current Id Max 33A
Junction to Case Thermal Resistance A 0.9°C/W
On State resistance @ Vgs = 10V 56ohm
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +175°C
Pulse Current Idm 130A
Voltage Vds Typ 150V
Voltage Vgs Max 5.5V
Voltage Vgs Rds on Measurement 10V
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Infineon Infineon - Mosfet, N, 150V, 33A, To-220 - Irfb33N15Dpbf |Infineon IRFB33N15DPBF out of stock
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