MID200-12A4 Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - IGBTs - Modules
MOD IGBT RBSOA 1200V 270A Y3-DCB
Specifications
Part Status Active
IGBT Type NPT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 270A
Power - Max 1130W
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 150A
Current - Collector Cutoff (Max) 10mA
Input Capacitance (Cies) @ Vce 11nF @ 25V
Input Standard
NTC Thermistor No
Mounting Type Chassis Mount
Package / Case Y3-DCB
Supplier Device Package Y3-DCB
Semiconductors - Discretes > Transistors > IGBT Single Transistors
IGBT MODULE 1.2KV 270A
Specifications
DC Collector Current 270A
Collector Emitter Saturation Voltage Vce(on) 2.2V
Power Dissipation Pd 1.13kW
Collector Emitter Voltage V(br)ceo 1.2kV
Transistor Case Style Module
No. of Pins 7Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL -
SVHC No SVHC (15-Jun-2015)
Transistor Polarity N Channel
See Also: MID-200A
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